Researchers unravel charge carrier dynamics of silicon oxide tunneling junctionsProf. Ye Jichun&
Researchers unravel charge carrier dynamics of silicon oxide tunneling junctionsProf. Ye Jichun’s team at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS), collaborating with researchers at the University of Nottingham Ningbo China, has revealed the underlying dynamics of Silicon oxide (SiOx) tunneling junctions, including pinhole formation processes and charge-carrier transport mechanisms. The study was published in Cell Reports Physical Science. As one of the most promising alternatives to reduce the cost and improve the efficiency of devices, tunnel oxide passivating contact (TOPCon) technology has attracted considerable attention in the photovoltaic (PV) community. However, the physical mechanism of the core structures of TOPCon, i.e., polycrystalline silicon (poly-Si)/ SiOx/ crystalline silicon (c-Si) junctions, has not been clarified, restricting the further improvement of device efficiency. To address this problem, researchers at NIMTE conducted extensive experiments and simulations, unraveling the underlying charge carrier dynamics of the SiOx tunneling junctions. Read more. -- source link
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