Ultrafast optical-magnetic memory deviceMagnetic random-access memory (MRAM) technology offers subst
Ultrafast optical-magnetic memory deviceMagnetic random-access memory (MRAM) technology offers substantial potential towards next-generation universal memory architecture. However, state-of-the-art MRAMs are still fundamentally constrained by a sub-nanosecond speed limitation, which has remained a long-lasting scientific challenge in the spintronics R&D. In this double doctorate project, Luding Wang experimentally demonstrated a fully-functional picosecond opto-MRAM building block device, by integrating ultrafast photonics with spintronics.MRAM development bottlenecksHave you ever experienced an unexpected shutdown of your computer, losing documents in the process that you have spent hours working on? Magnetic random-access memory (MRAM) technology focuses on manipulating electron spin to deal with such a technical glitch. Inside MRAM bits, data are written by switching the direction nanomagnets. Thus, MRAM allows data to be saved in an enduring manner when the power is off, computers to boot faster, and the devices consume less power.Read more. -- source link
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